Injection-enhanced annealing kinetics of GaAs-based gamma-irradiated homo- and heterostructures

The injection-enhanced annealing kinetics of radiation-induced defects has been studied by electroluminescence intensity measurements for quantum-sized GaAs/AlGaAs heterostructures irradiated with $^{60}$Co gamma-quanta. The comparison of the obtained results with the available literature data for GaAs homostructures has revealed that in transition from homostructures to heterostructures the current density, needed for radiation-induced defects annealing, decreases by 2–4 orders and a different mechanism of defect annihilation comes out. The results indicate higher injection-enhanced annealing efficiency in devices containing quantum-sized heterostructures.