Formation of InAs$_{1-x}$N$_x$ islands and InAs stem-assisted InAs$_{1-x}$N$_x$ nanowires by means of epitaxial growth on silicon

The possibility of forming InAs$_{1-x}$N$_x$ nanowires on InAs stems on the Si(111) surface coated with partly destructed silicon oxide was demonstrated. Formation of parasitic islands was also detected. It was revealed that in the first case the predominantly wurtzite structural phase is formed, while in the second case the sphalerite structural phase dominates.