Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure

Investigations of back reflectors technology development for IR (850 nm) light-emitting diodes based on AlGaAs/GaAs heterostructures with multiple quantum wells, grown by metalorganic vapor-phase epitaxy, have been carried out. Reflectors constructions based on multi-layer systems included layers of dielectric (SiO$_2$), adhesive material (NiCr), metal with high reflector properties (Ag) and barrier stop-layers (Ti, Pt) have been developed. Analyzed was the influence of reflector compound on light-emitting diodes parameters. External quantum efficiency $>$ 45% at current 100–350 mA and optical power $>$ 450 mW at current 800 mA were achieved.