High-power subnanosecond module based on $p$–$i$–$n$ AlGaAs/GaAs photodiodes

The results of the development and research of a photodetector module based on AlGaAs/GaAs $p$–$i$–$n$ photodiodes at conversion of laser radiation in photovoltaic (without reverse bias) and photodiode (with reverse bias up to 120 V) operating modes are presented. Photodiodes grown by MOVPE epitaxy in the photovoltaic mode under excitation by laser radiation at a wavelength of 810 nm with a power density of $\sim$500 W/cm$^2$ provided efficiency 54%. The maximum output pulsed electrical power of the photodetector module when excited by pulsed laser radiation with a peak power of $\sim$13 W and a duration of $\sim$1.0 ns was 2.5 W in the photovoltaic mode and 8.0 W in the photodiode mode, with a reverse bias of 120 V.