Using current spreading resistance microscopy to determine the parameters of the barrier layer in NBN structures based on INSB

A new approach to visualizing the electronic subsystem of InSb/InAlSb barrier-diode structures, evaluating the homogeneity of the InAlSb layer that blocks majority carriers in such structures, and determining the height of the corresponding potential barrier was demonstrated. The approach is based on measuring the current spreading resistance on a freshly prepared split of an epitaxial heterostructure using a diamond-coated silicon probe.