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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024 Volume 50, Issue 21, Pages 57–60 (Mi pjtf6817)

Dependence of lasing wavelength on optical loss in quantum dot laser

N. V. Kryzhanovskayaa, I. S. Makhova, A. M. Nadtochiyab, K. A. Ivanova, È. I. Moiseeva, I. A. Melnichenkoa, S. D. Komarova, S. A. Mintairovb, N. A. Kalyuzhnyyb, M. V. Maksimovc, Yu. M. Shernyakovb, A. E. Zhukova

a National Research University "Higher School of Economics", St. Petersburg Branch, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

Abstract: The dependence of the lasing line position on optical loss is investigated for stripe lasers with different numbers of planes of dense InGaAs/GaAs quantum dots (quantum well-dots). An analytical expression is obtained that explicitly establishes the relationship between the peak position of the gain spectrum and the value at the peak gain for an array with a Gaussian density of states. Reasonable agreement between the model predictions and experimental data is demonstrated. The saturated mode gain is estimated as 51 cm$^{-1}$ per layer.

Keywords: quantum dots, semiconductor laser, gain spectrum, inhomogeneous broadening.

Received: 26.06.2024
Revised: 11.07.2024
Accepted: 12.07.2024

DOI: 10.61011/PJTF.2024.21.58962.20039



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