Abstract:
The dependence of the lasing line position on optical loss is investigated for stripe lasers with different numbers of planes of dense InGaAs/GaAs quantum dots (quantum well-dots). An analytical expression is obtained that explicitly establishes the relationship between the peak position of the gain spectrum and the value at the peak gain for an array with a Gaussian density of states. Reasonable agreement between the model predictions and experimental data is demonstrated. The saturated mode gain is estimated as 51 cm$^{-1}$ per layer.
Keywords:quantum dots, semiconductor laser, gain spectrum, inhomogeneous broadening.