Analysis of Zn diffusion process from the vapor phase in InGaAs/InP materials

A physical approach has been developed to simulate the process of zinc diffusion into InGaAs/InP heterostructures from metalorganic diethylzinc source in a metal-organic chemical vapor deposition reactor. The results of numerical calculations based on the proposed model showed compliance with experimental data on the distribution of electrically active dopants in InGaAs/InP heterostructures obtained by capacitance-voltage profiling. Effective diffusion coefficients in InGaAs/InP materials and their dependences on temperature and pressure have been established. The nonlinear coordinate dependences of the segregation coefficient, unique for each technological process, are determined. Comparison with scanning electron microscopy data of a two-dimensional diffusion profile demonstrated the isotropy of diffusion processes for InGaAs/InP.