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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024 Volume 50, Issue 22, Pages 48–52 (Mi pjtf6828)

Analysis of Zn diffusion process from the vapor phase in InGaAs/InP materials

P. E. Kopytova, I. A. Starkova, I. I. Novikova, S. A. Blokhinb, D. S. Papyleva, R. V. Levinb, V. V. Andryushkina, Ya. N. Kovachb, E. V. Nikitinac, K. O. Voropaevd, L. Ya. Karachinskya

a ITMO University, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
d JSC OKB-Planeta, Veliky Novgorod, Russia

Abstract: A physical approach has been developed to simulate the process of zinc diffusion into InGaAs/InP heterostructures from metalorganic diethylzinc source in a metal-organic chemical vapor deposition reactor. The results of numerical calculations based on the proposed model showed compliance with experimental data on the distribution of electrically active dopants in InGaAs/InP heterostructures obtained by capacitance-voltage profiling. Effective diffusion coefficients in InGaAs/InP materials and their dependences on temperature and pressure have been established. The nonlinear coordinate dependences of the segregation coefficient, unique for each technological process, are determined. Comparison with scanning electron microscopy data of a two-dimensional diffusion profile demonstrated the isotropy of diffusion processes for InGaAs/InP.

Keywords: diffusion, diethylzinc, dopant, segregation, indium phosphide.

Received: 14.07.2024
Revised: 22.07.2024
Accepted: 29.07.2024

DOI: 10.61011/PJTF.2024.22.59136.20059



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