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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023 Volume 49, Issue 2, Pages 14–16 (Mi pjtf6893)
Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes

A. S. Sobolevab, A. Yu. Pavlovc, M. V. Maytamacd, I. A. Glinskiye, D. S. Ponomarevcb, K. E. Spirinf, B. A. Zhmudb, R. A. Khabibullinbc

a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia
b Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region
c V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia
d Bauman Moscow State Technical University, Moscow, Russia
e MIREA — Russian Technological University, Moscow, Russia
f P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia

Abstract: Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine the parameters of its equivalent circuit. By using numerical simulation we show that the coplanar transmission line with the RTD under study provides an amplification up to 8 GHz.

Keywords: resonant tunneling diodes, active microstrip transmission lines, distributed emitters, diodes with double metal contacts.

Received: 18.10.2022
Revised: 31.10.2022
Accepted: 09.11.2022

DOI: 10.21883/PJTF.2023.02.54279.19395



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