Effect of growth temperature on the physicochemical properties of low-temperature GaAs layers fabricated by pulsed laser deposition

Low-temperature device-quality GaAs layers with high resistivity were obtained by pulsed laser deposition. The properties of GaAs layers are sensitive to the process temperature. At a growth temperature of less than 300$^\circ$C, the layers have low electron mobility and a shift of the GaAs stoichiometry towards the region of arsenic enrichment at a level of 1–2 at.%. At a growth temperature of more than 300$^\circ$C, the layers show an improved crystalline quality. The dependence of the relative intensity of the As $3d$ photoelectron line on the growth temperature confirms this trend with a change in the growth temperature.