Degradation processes in a memristor based on germanium selenide with a self-forming conductive channel

The effect of temperature on degradation processes in an Ag/SnSe/Ge$_2$Se$_3$/W ionic memristor with a self-forming conductive channel in the temperature range of 22–65$^\circ$C at a switching frequency of 100 Hz was studied based on determining the electrical conductivity of the memristor in low-resistance and high-resistance modes of operation. It has been established that at elevated temperatures, degradation processes occur faster and affect both the low-resistance and high-resistance modes of operation of the memristor. The degradation activation energy was determined to be 1.16 eV.