D. V. Yurasov, A. N. Yablonskii, M. V. Shaleev, D. V. Shengurov, E. E. Rodyakina, Zh. V. Smagina, V. A. Verbus, A. V. Novikov, “Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 49, Issue 10,Pages <nobr>29

Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths

D. V. Yurasov^a, A. N. Yablonskii^a, M. V. Shaleev^a, D. V. Shengurov^a, E. E. Rodyakina^bc, Zh. V. Smagina^c, V. A. Verbus^ad, A. V. Novikov^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
^b Novosibirsk State University, Novosibirsk, Russia
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
^d National Research University – Higher School of Economics in Nizhny Novgorod, Nizhny Novgorod, Russia

Abstract: Two-dimensional Si-based photonic crystals with embedded Ge nanoislands were studied. In particular, dependences of the steady-state and time-resolved photoluminescence response on the depth of the air-holes which form the photonic crystal itself were investigated. It was shown that the maximum luminescence intensity was observed not for the fully-etched photonic crystals but for the intermediately etched ones. The possible origin of such a behavior is discussed.

Keywords: SiGe heterostructures, Ge islands, photonic crystals, photoluminescence, non-radiative recombination.

Received: 20.01.2023
Revised: 24.03.2023
Accepted: 24.03.2023

DOI: 10.21883/PJTF.2023.10.55431.19511