Growth of $\beta$-Ga$_2$O$_3$ single crystals by the solution-melt method

The modes of growth of Ga$_2$O$_3$ crystals from a solution of gallium oxide in a MoO$_3$ melt in the process of MoO$_3$ evaporation at a temperature of 1050$^\circ$C have been studied. It is shown that at this temperature the Ga$_2$O$_3$ crystalline phase is in equilibrium with the MoO$_3$ melt. As a result of the experiments, single crystals of $\beta$-Ga$_2$O$_3$ were obtained up to 1.5 mm in cross section. The composition and structure of the crystals were studied by X-ray diffraction and electron microscopy.