G. S. Gagis, V. I. Kuchinskii, R. Yu. Kozlov, D. Yu. Kazantsev, B. Ya. Ber, M. V. Tokarev, A. S. Vlasov, V. I. Vasil’ev, “Solid-phase substitution processes with phosphorus in InAs and InSb”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 49, Issue 20,Pages <nobr>20

Solid-phase substitution processes with phosphorus in InAs and InSb

G. S. Gagis^a, V. I. Kuchinskii^a, R. Yu. Kozlov^bc, D. Yu. Kazantsev^a, B. Ya. Ber^a, M. V. Tokarev^a, A. S. Vlasov^a, V. I. Vasil’ev^a

^a Ioffe Institute, St. Petersburg, Russia
^b National University of Science and Technology «MISIS», Moscow, Russia
^c Federal State Research and Design Institute of Rare Metal Industry, Moscow, Russia

Abstract: The processes of solid-phase substitution of atoms of the fifth group for phosphorus atoms in InAs semiconductor wafers at temperatures of 580–590$^\circ$C and in InSb at 440–460$^\circ$C using solutions of the Sn–ZnGeP$_2$ and Sn–CdGeP$_2$ melts as vapor sources have been studied. The formation of InP$_x$Sb$_{1-x}$ solid solution in InSb was confirmed by the Raman light scattering method.

Keywords: solid-phase substitution reactions, $p$–$n$-junction, doping, narrow-bandgap semiconductors.

Received: 11.07.2023
Revised: 29.08.2023
Accepted: 29.08.2023

DOI: 10.61011/PJTF.2023.20.56341.19683