InSb/GaAs heterostructures for magnetic field sensors

Structural defects and transport properties have been studied in InSb layers grown on GaAs substrates by molecular beam epitaxy. The composition of the buffer layer which ensures the lowest defect density and electron mobility of about 39 000 cm$^2$/(V $\cdot$ s) at room temperature in undoped InSb layers 0.5 $\mu$m thick was determined. A Hall sensor based on $n$-type InSb layers with a high room-temperature sensitivity ($\sim$27 V/(A $\cdot$ T)) was created.