A. V. Kononina, Yu. V. Balakshin, K. A. Gonchar, I. V. Bozh'ev, A. A. Shemukhin, V. S. Chernysh, “Amorphization of silicon nanowires upon irradiation with argon ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 2,Pages <nobr>11

Amorphization of silicon nanowires upon irradiation with argon ions

A. V. Kononina^a, Yu. V. Balakshin^ab, K. A. Gonchar^a, I. V. Bozh'ev^ac, A. A. Shemukhin^ab, V. S. Chernysh^ab

^a Lomonosov Moscow State University, Moscow, Russia
^b Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
^c Quantum Technology Center of M. V. Lomonosov Moscow State University, Moscow, Russia

Abstract: The irradiation of silicon nanowires with Ar$^+$ ions with the energy of 250 keV and fluences of 10$^{13}$ to 10$^{16}$ cm$^{-2}$ was carried out. The dependence of the destruction of the structure under ion irradiation on the fluence was investigated by Raman spectroscopy. It was shown that the amorphization of porous silicon occurs at higher values of displacement per atom than in thin silicon films.

Keywords: silicon nanowires, Raman spectroscopy, defect formation.

Received: 10.08.2021
Revised: 27.09.2021
Accepted: 28.09.2021

DOI: 10.21883/PJTF.2022.02.51912.18989