The features of the layers growth in stressed InAs/GaSb superlattices

The paper presents the results of a study of factors affecting the thickness of transition (interface) layers in stressed InAs/GaSb superlattices during growth by MOCVD method. It is shown that the thicknesses of the interface layers between InAs and GaSb are practically independent of the growth temperature. The thickness of the interface layers is influenced by the direction of switching the layer growth. The smallest thickness of 1.2–1.4 nm of the interface layer InAs/GaSb was obtained for the direction of growth switching from GaSb to InAs.