S. A. Mintairov, S. A. Blokhin, N. A. Kalyuzhnyy, M. V. Maksimov, N. A. Maleev, A. M. Nadtochiy, R. A. Salii, N. V. Kryzhanovskaya, A. E. Zhukov, “High-speed photodetectors based on InGaAs/GaAs quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 4,Pages <nobr>32–35</nobr>

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022 Volume 48, Issue 4, Pages 32–35 (Mi pjtf7239)

High-speed photodetectors based on InGaAs/GaAs quantum well-dots

S. A. Mintairov^ab, S. A. Blokhin^b, N. A. Kalyuzhnyy^b, M. V. Maksimov^a, N. A. Maleev^b, A. M. Nadtochiy^ac, R. A. Salii^b, N. V. Kryzhanovskaya^c, A. E. Zhukov^c

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^b Ioffe Institute, St. Petersburg, Russia
^c National Research University "Higher School of Economics", St. Petersburg Branch, St. Petersburg, Russia

Abstract: High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dots (QWDs) nanostructures are investigated. The -3 dB bandwidth of 8.2 GHz at 905 nm has been demonstrated. It is shown that internal processes in QWDs make it possible to create a PD with a bandwidth of up to 12.5 GHz, and the processes of thermalization of carriers from QWD layers do not limit the speed at reverse biases of more than 5 V.

Keywords: photodetector, speed, frequency response, nanostructures.

Received: 22.10.2021
Revised: 16.11.2021
Accepted: 17.11.2021

DOI: 10.21883/PJTF.2022.04.52082.19059

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