V. V. Lundin, S. N. Rodin, A. V. Sakharov, A. F. Tsatsul'nikov, A. V. Lobanova, M. V. Bogdanov, R. A. Talalaev, Haiding Sun, Shibing Long, “Study of Ga$_2$O$_3$ deposition by MOVPE from trimethylgallium and oxygen in a wide temperature range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 4,Pages 44

Study of Ga$_2$O$_3$ deposition by MOVPE from trimethylgallium and oxygen in a wide temperature range

V. V. Lundin^a, S. N. Rodin^a, A. V. Sakharov^a, A. F. Tsatsul'nikov^b, A. V. Lobanova^c, M. V. Bogdanov^c, R. A. Talalaev^c, Haiding Sun^d, Shibing Long^d

^a Ioffe Institute, St. Petersburg, Russia
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
^c Soft-Impact Ltd., St. Petersburg, Russia
^d School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, China

Abstract: Study of Ga$_2$O$_3$ deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga$_2$O$_3$ deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700$^\circ$C, that is 150$^\circ$C higher, then for GaN deposition in the same reactor.

Keywords: gallium oxide, MOVPE.

Received: 17.11.2021
Revised: 24.11.2021
Accepted: 24.11.2021

DOI: 10.21883/PJTF.2022.04.52085.19081