P. N. Aruev, V. P. Belik, A. A. Blokhin, V. V. Zabrodskii, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev, “In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 5,Pages <nobr>3

In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges

P. N. Aruev, V. P. Belik, A. A. Blokhin, V. V. Zabrodskii, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev

Ioffe Institute, St. Petersburg, Russia

Abstract: An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the 114–170 and 210–1100 nm ranges. It has been demonstrated that the avalanche photodiode reaches the quantum yield of 29 to 9300 electrons/photon at the 160 nm wavelength and bias voltage of 190–303 V, respectively.

Keywords: avalanche photodiode, vacuum ultraviolet, visible light range, near IR, silicon.

Received: 17.09.2021
Revised: 19.11.2021
Accepted: 29.11.2021

DOI: 10.21883/PJTF.2022.05.52146.19026