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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022 Volume 48, Issue 5, Pages 20–23 (Mi pjtf7249)

Nonlinear effects in the sputtering of gallium arsenide and silicon by bismuth cluster ions

A. B. Tolstoguzovabc, P. Mazarovd, A. E. Ieshkine, F. Meyerd, D. J. Fuc

a Utkin Ryazan State Radio Engineering University, Ryazan, Russia
b Centre for Physics and Technological Research, Universidade Nova de Lisboa, Caparica, Portugal
c Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and Hubei Key Laboratory of Nuclear Solid Physics, School of Physics and Technology, Wuhan University, Wuhan, China
d Raith GmbH, Dortmund, Germany
e Lomonosov Moscow State University, Moscow, Russia

Abstract: An experimental study on the influence of the energy and the number of atoms in the bombarding ions Bi$^+_n$ ($n$ = 1–4) on the sputter yield of GaAs was carried out. It was shown that the specific sputter yield $Y_{sp}$ non-additively increases with increasing $n$ and specific kinetic energy $E_{sp}$ per an atom in the bombarding ion, and the efficiency of energy transfer from bombarding ions to target atoms also increases with increasing $n$. A comparison was made with the previously obtained results for Si targets.

Keywords: ion sputtering, non-additivity factor, cluster ions, bismuth.

Received: 08.11.2021
Revised: 01.12.2021
Accepted: 02.12.2021

DOI: 10.21883/PJTF.2022.05.52150.19071



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