Abstract:
An experimental study on the influence of the energy and the number of atoms in the bombarding ions Bi$^+_n$ ($n$ = 1–4) on the sputter yield of GaAs was carried out. It was shown that the specific sputter yield $Y_{sp}$ non-additively increases with increasing $n$ and specific kinetic energy $E_{sp}$ per an atom in the bombarding ion, and the efficiency of energy transfer from bombarding ions to target atoms also increases with increasing $n$. A comparison was made with the previously obtained results for Si targets.