Hydrogen influence on electrical and photoelectrical properties of InP/Pd thin-film structures obtained by sol-gel method

The current-voltage characteristics and photoelectric properties of semiconductor structures containing Pd nanoparticles in thin films synthesized by the sol-gel method on an $n$-InP substrate have been investigated. The experimental results show that in presence of hydrogen the cut-off voltage changes. The photovoltage and photocurrent upon illumination of the structure with an LED ($\lambda$ = 0.9 $\mu$m) and pulsed exposure to hydrogen change, that was observed earlier for hydrogen-sensitive Pd/$n$-InP Schottky diodes. The prospects of using the structures under study as a sensitive element for hydrogen sensor are discussed.