V. G. Dubrovskii, M. V. Rylkova, A. S. Sokolovskii, Zh. V. Sokolova, S. V. Mikushev, “Role of the shadowing effect in the growth kinetics of III–V nanowires by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 11,Pages <nobr>12

Role of the shadowing effect in the growth kinetics of III–V nanowires by molecular beam epitaxy

V. G. Dubrovskii^a, M. V. Rylkova^a, A. S. Sokolovskii^a, Zh. V. Sokolova^ab, S. V. Mikushev^a

^a Saint Petersburg State University, St. Petersburg, Russia
^b S. Petersburg State University of Economics

Abstract: A model for III–V nanowire (NW) growth in molecular beam epitaxy (MBE) is developed, which describes the NW growth by surface diffusion of adatoms influenced by the shadowing effect. It is shown that the shadowing effect strongly influences the growth kinetics in dense ensembles of NWs. A new solution for the NW length as a function of its radius and deposition thickness is obtained. A comparison is given for theoretical and experimental lengths of InP NWs grown on either adsorbing or reflecting substrates.

Keywords: nanowires, adatom diffusion, shadowing effect.

Received: 28.03.2022
Revised: 08.04.2022
Accepted: 11.04.2022

DOI: 10.21883/PJTF.2022.11.52606.19202