I. S. Makhov, A. A. Bekman, M. M. Kulagina, J. A. Guseva, N. V. Kryzhanovskaya, A. M. Nadtochiy, M. V. Maksimov, A. E. Zhukov, “Two-state lasing in injection microdisks with InAs/InGaAs quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 12,Pages <nobr>40

Two-state lasing in injection microdisks with InAs/InGaAs quantum dots

I. S. Makhov^a, A. A. Bekman^b, M. M. Kulagina^b, J. A. Guseva^b, N. V. Kryzhanovskaya^a, A. M. Nadtochiy^a, M. V. Maksimov^c, A. E. Zhukov^a

^a National Research University "Higher School of Economics", St. Petersburg Branch, St. Petersburg, Russia
^b Ioffe Institute, St. Petersburg, Russia
^c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

Abstract: Spectral dependencies of the electroluminescence intensity of a microdisk laser with a diameter of 31 $\mu$m with active region based on InAs/InGaAs quantum dots, operating in the continuous-wave regime, are investigated in a wide range of injection currents. Simultaneous lasing through the ground and excited states of quantum dots under intense excitation is demonstrated in injection microdisk laser for the first time. At low pumping powers lasing occurs via ground states of quantum dots only.

Keywords: microlaser, quantum dots, two-state lasing, ground state, excited state.

Received: 29.04.2022
Revised: 04.05.2022
Accepted: 04.05.2022

DOI: 10.21883/PJTF.2022.12.52678.19242