V. I. Nikolaev, A. V. Almaev, B. O. Kushnarev, A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, R. B. Timashov, M. P. Scheglov, P. N. Butenko, E. V. Chernikov, “Gas-sensing properties of In$_2$O$_3$–Ga$_2$O$_3$ alloy films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 14,Pages 37

Gas-sensing properties of In$_2$O$_3$–Ga$_2$O$_3$ alloy films

V. I. Nikolaev^ab, A. V. Almaev^cd, B. O. Kushnarev^d, A. I. Pechnikov^ab, S. I. Stepanov^ab, A. V. Chikiryaka^a, R. B. Timashov^a, M. P. Scheglov^a, P. N. Butenko^ad, E. V. Chernikov^dc

^a Ioffe Institute, St. Petersburg, Russia
^b Perfect Crystals LLC, St. Petersburg, Russia
^c Fokon LLC, Kaluga, Russia
^d Tomsk State University, Tomsk, Russia

Abstract: The effect of the gaseous medium composition on the electrically conductive properties of In$_2$O$_3$–Ga$_2$O$_3$ films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550$^\circ$C, the In$_2$O$_3$–Ga$_2$O$_3$ films exhibit high sensitivity to H$_2$, NH$_3$ and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In$_2$O$_3$–Ga$_2$O$_3$ films to gases is proposed.

Keywords: In$_2$O$_3$–Ga$_2$O$_3$, halide vapor-phase epitaxy, gas sensitivity.

Received: 01.04.2022
Revised: 18.05.2022
Accepted: 06.06.2022

DOI: 10.21883/PJTF.2022.14.52869.19211