K. Yu. Shugurov, A. M. Mozharov, G. A. Sapunov, V. V. Fedorov, È. I. Moiseev, S. A. Blokhin, A. G. Kuz'menkov, I. S. Mukhin, “Microwave Schottky diodes based on single GaN nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 15,Pages <nobr>22–25</nobr>

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022 Volume 48, Issue 15, Pages 22–25 (Mi pjtf7367)

Microwave Schottky diodes based on single GaN nanowires

K. Yu. Shugurov^a, A. M. Mozharov^b, G. A. Sapunov^a, V. V. Fedorov^a, È. I. Moiseev^c, S. A. Blokhin^d, A. G. Kuz'menkov^d, I. S. Mukhin^ae

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^b Saint Petersburg State University, St. Petersburg, Russia
^c National Research University "Higher School of Economics", St. Petersburg Branch, St. Petersburg, Russia
^d Ioffe Institute, St. Petersburg, Russia
^e Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia

Abstract: A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter $S_{21}$) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz.

Keywords: GaN, nanowires, microwave band, Schottky diode.

Received: 21.04.2022
Revised: 16.06.2022
Accepted: 17.06.2022

DOI: 10.21883/PJTF.2022.15.53127.19229

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