Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers

The temperature characteristics of ring lasers with a diameter of 480 $\mu$m of an original design with an active region based on 10 layers of InAs/InGaAs/GaAs quantum dots are studied. The lasers demonstrated a low threshold current density (200 A/cm$^2$ at 20$^\circ$C), the characteristic temperature of the threshold current in the range of 20–100$^\circ$C was 68 K, the maximum lasing temperature was as high as 130$^\circ$C. These values are only slightly inferior to the parameters of the edge-emitting lasers fabricated from the same epitaxial wafer.