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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022 Volume 48, Issue 20, Pages 39–42 (Mi pjtf7425)

Titanium oxynitride thin films wide temperature range sensors

F. A. Barona, L. V. Shanidzea, M. V. Rautskiia, Yu. L. Mikhlinb, A. V. Lukyanenkoa, S. O. Konovalovc, F. V. Zelenovc, P. V. Shvetsd, A. Yu. Goikhmand, N. V. Volkova, A. S. Tarasova

a Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
b Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Russian Academy of Sciences, Krasnoyarsk, Russia
c M. F. Reshetnev Siberian State University of Science and Technologies, Krasnoyarsk, Russia
d Recearch and Education Center "Functional Nanomaterials", Immanuel Kant Baltic Federal University, Kaliningrad, Russia

Abstract: The temperature dependence of the resistivity of titanium oxynitride TiN$_x$O$_y$ thin films with different oxygen and nitrogen content obtained by atomic layer deposition was investigated. We found that the resistance of all films monotonically decreased with increasing temperature and varied within a wide range depending on the chemical composition and thickness of the film. The technology for obtaining a compact temperature sensor of wide range from helium to room temperature based on 40 nm thick TiN$_{0.87}$O$_{0.97}$ is presented.

Keywords: titanium oxide-nitride, temperature sensors, thin films, atomic layer deposition, integrated circuit components.

Received: 28.06.2022
Revised: 19.08.2022
Accepted: 03.09.2022

DOI: 10.21883/PJTF.2022.20.53695.19292



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