Determination of the donor impurity concentration in thin $i$-InGaAs layers

This paper describes a technique that makes it possible, by analyzing the capacitance-voltage characteristics of metal-insulator-semiconductor or metal-semiconductor structures, to determine the concentration of the background donor impurity in undoped $i$-In$_{0.53}$Ga$_{0.47}$As layers with a thickness less than the width of the space charge region in the near-surface region of the semiconductor in strong inversion mode.