the features of the crystallization of an intermediate silicon layer during the transfer of a thin 3C-SiC(001) layer onto a 6H-SiC(0001) substrate

The paper considers the features of crystallization of the silicon bonding layer between a (001)-oriented thin layer of cubic silicon carbide and a hexagonal (0001) 6H-SiC substrate. General patterns revealed in the formation of orientation relationships for the silicon layer with respect to the 3C-SiC layer and the 6H-SiC substrate are discussed.