I. A. Prudaev, V. V. Kopyev, V. L. Oleynik, M. S. Skakunov, A. S. Sotnikova, S. M. Gushchin, V. E. Zemlyakov, “Effect of temperature on the switching voltage of avalanche <nobr>$S$</nobr>-diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 4,Pages <nobr>23

Effect of temperature on the switching voltage of avalanche $S$-diodes

I. A. Prudaev^a, V. V. Kopyev^a, V. L. Oleynik^a, M. S. Skakunov^a, A. S. Sotnikova^ab, S. M. Gushchin^b, V. E. Zemlyakov^c

^a Tomsk State University
^b Scientific-Research Institute of Semiconductor Devices, Tomsk, Russia
^c National Research University of Electronic Technology, Zelenograd, Moscow, Russia

Abstract: The paper presents the results of an experimental study of the effect of temperature on the switching voltage of an avalanche $S$-diode made of GaAs with an iron impurity. It was found that an increase in temperature can lead to a decrease in the switching voltage at high switching frequencies (500 kHz). To analyze the effect, a simulation of double switching of an $S$-diode was carried out, and two different modes of its operation at a high pulse repetition rate were found.

Keywords: avalanche breakdown, deep centers, gallium arsenide, power electronics, pulse technology.

Received: 23.09.2024
Revised: 21.10.2024
Accepted: 22.10.2024

DOI: 10.21883/0000000000