Morphology and electrical parameters of thin aluminum films deposited on substrates at temperatures from 77 to 800 K

Experimental studies of the basic parameters of 150 nm aluminum films on Si(111), SiO$_2$/Si(001) substrates have been performed. The films were obtained by magnetron sputtering and thermal evaporation in the temperature range from 77 to 800 K. A vacuum insert was made for the Z400 setup to cool the substrate to liquid nitrogen temperature, and a standard heater of the Kurt Lesker setup was used to heat it to 800 K. It was found that cryogenic deposition of aluminum adatoms allows decreasing the size of the formed grains from 280 to 20 nm and the roughness from 4.2 to 1.7 nm. The specific resistance of the films and the superconducting transition temperature Tc increase from 27 to 260 $\Omega$ nm and from 1.2 to 2.3 K, respectively. This is associated with an increase in the number of intergrain boundaries in cryogenic Al films and can lead to an increase in their kinetic inductance by 20 times or more.