Abstract:
The paper presents the results of experimental studies using the electron magnetic resonance method of three-layer CoNi/Si/FeNi films, where one layer is magnetically hard and the other is magnetically soft. It was found that the introduction of a non-magnetic semiconductor silicon interlayer significantly affects the interlayer interaction. When studying the angular dependences of the resonance fields related to different subsystems, a direct observation of the biquadratic interlayer interaction was obtained, which value depends both on the thickness of the silicon interlayer and on the measurement temperature.