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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025 Volume 51, Issue 4, Pages 46–49 (Mi pjtf7498)

Biquadratic interlayer interaction in three-layer CoNi/Si/FeNi films

G. S. Patrinab, Ya. A. Vahitovab, Ya. G. Shiyanab, A. V. Kobyakovab, V. I. Yushkova

a Siberian Federal University, Krasnoyarsk, Russia
b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia

Abstract: The paper presents the results of experimental studies using the electron magnetic resonance method of three-layer CoNi/Si/FeNi films, where one layer is magnetically hard and the other is magnetically soft. It was found that the introduction of a non-magnetic semiconductor silicon interlayer significantly affects the interlayer interaction. When studying the angular dependences of the resonance fields related to different subsystems, a direct observation of the biquadratic interlayer interaction was obtained, which value depends both on the thickness of the silicon interlayer and on the measurement temperature.

Keywords: magnetic resonance, exchange interaction, three-layer films, biquadratic interaction.

Received: 02.10.2024
Revised: 29.10.2024
Accepted: 29.10.2024

DOI: 10.61011/PJTF.2025.04.59844.20134



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© Steklov Math. Inst. of RAS, 2025