D. A. Bauman, D. Yu. Panov, V. A. Spiridonov, P. A. Bogdanov, A. Yu. Ivanov, V. V. Lundin, E. Yu. Lundina, A. F. Tsatsul'nikov, A. E. Romanov, P. N. Brunkov, “Czochralski growth of semi-insulating bulk iron-doped $\beta$-Ga$_2$O$_3$ crystals with a resistivity of 160 G$\Omega$ $\cdot$ cm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 5,Pages 57

Czochralski growth of semi-insulating bulk iron-doped $\beta$-Ga$_2$O$_3$ crystals with a resistivity of 160 G$\Omega$ $\cdot$ cm

D. A. Bauman^a, D. Yu. Panov^a, V. A. Spiridonov^a, P. A. Bogdanov^a, A. Yu. Ivanov^a, V. V. Lundin^b, E. Yu. Lundina^c, A. F. Tsatsul'nikov^bd, A. E. Romanov^ab, P. N. Brunkov^b

^a ITMO University, St. Petersburg, Russia
^b Ioffe Institute, St. Petersburg, Russia
^c Kostromskaya Ave., St. Petersburg, Russia
^d Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia

Abstract: In this work, bulk crystals of gallium oxide $\beta$-Ga$_2$O$_3$ doped with iron were grown by the Czochralski method. Analysis of X-ray diffraction spectra confirmed the presence of only the $\beta$-phase and high crystalline quality. The measured specific resistance was 160 G$\Omega$ $\cdot$ cm.

Keywords: bulk crystals, gallium oxide, semi-insulating substrates.

Received: 02.10.2024
Revised: 05.11.2024
Accepted: 08.11.2024

DOI: 10.61011/PJTF.2025.05.59907.20137