V. V. Bazarov, E. M. Begishev, V. F. Valeev, I. R. Vakhitov, A. I. Gumarov, A. L. Zinnatullin, A. G. Kiiamov, N. M. Lyadov, V. I. Nuzhdin, R. I. Khaibullin, “High-temperature ferromagnetism in epitaxial TiO<nobr>$_2$</nobr> film implanted with cobalt impurity at elevated temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 8,Pages <nobr>16

High-temperature ferromagnetism in epitaxial TiO$_2$ film implanted with cobalt impurity at elevated temperature

V. V. Bazarov^a, E. M. Begishev^a, V. F. Valeev^a, I. R. Vakhitov^ab, A. I. Gumarov^ab, A. L. Zinnatullin^ab, A. G. Kiiamov^b, N. M. Lyadov^a, V. I. Nuzhdin^a, R. I. Khaibullin^ab

^a Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
^b Institute of Physics, Kazan (Volga region) Federal University

Abstract: It is shown that implantation of Co$^+$ ions with an energy of 40 keV and a high dose of 1.25 $\cdot$ 10$^{17}$ ion/cm$^2$ into a thin epitaxial TiO$_2$ film heated to 873 K induces ferromagnetism with a Curie temperature above room temperature. According to the analysis of presented experimental data, the observed ferromagnetism is mainly due to the formation of cobalt nanoparticles of about 30 nm in size in the implanted TiO$_2$ film.

Keywords: ion implantation, titanium dioxide, diluted magnetic oxide semiconductors, oxygen vacancies, non-volatile memory.

Received: 16.10.2024
Revised: 06.12.2024
Accepted: 16.12.2024

DOI: 10.61011/PJTF.2025.08.60157.20155