GaInP on silicon nanostructures self-catalyst growth from vapor phase

Here we report the results of the study of GaInP nanowires obtained by the self-catalytic growth method from saturated vapors of phosphorus and indium in a quasi-closed volume on silicon substrates with the (111) orientation. The morphology and composition of the obtained structures were studied by scanning electron microscopy. It was found that the presence of silicon in the catalytic gallium droplets affects the morphology and composition of the nanostructures. The Raman spectroscopy Studies of the obtained nanostructures were performed.