Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates

This paper presents a comparative study of the effect of buffer layers on characteristics of GaPN layers synthesized by molecular beam epitaxy on silicon substrates. Structures with a GaP buffer grown using the “migration-enhanced epitaxy” (MEE-GaP buffer) and a low-temperature GaP buffer with a smoothly increasing growth temperature were studied. It was shown that the photoluminescence intensity for the structures with MEE-GaP and optimized GaP buffer is almost equal, but the stress relaxation mechanisms are different.