Synthesis of epitaxial tellurium films by the method of thermochemical activation

We describe the technology of a thermoactivated process in the Te + H$_2$ system, by which the dissociation of tellurium molecules in the gas phase is used to obtain structurally perfect epitaxial tellurium films. The epitaxial films were deposited onto freshly cleaved mica substrates at a growth velocity of 6 $\mu$m/h and were oriented with the (100)Te face parallel to the substrate plane.