V. V. Lundin, D. V. Davydov, E. E. Zavarin, M. G. Popov, A. V. Sakharov, E. V. Yakovlev, D. S. Bazarevskii, R. A. Talalaev, A. F. Tsatsul'nikov, M. N. Mizerov, V. M. Ustinov, “MOVPE of III–N LED structures with short technological process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 5,Pages <nobr>9

This article is cited in 9 papers

MOVPE of III–N LED structures with short technological process

V. V. Lundin^ab, D. V. Davydov^ab, E. E. Zavarin^ab, M. G. Popov^b, A. V. Sakharov^ab, E. V. Yakovlev^c, D. S. Bazarevskii^c, R. A. Talalaev^c, A. F. Tsatsul'nikov^ab, M. N. Mizerov^b, V. M. Ustinov^a

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Soft-Impact Ltd., Saint-Petersburg

Abstract: The paper presents results on optimizing the MOVPE technology of light-emitting diode (LED) structures in a Dragon-125 system to accelerate the technological cycle. Due to the high growth rate of GaN layers and optimization of the initial GaN growth phase, the total duration of the epitaxial process is reduced from 4 h 45 min to 2 h 44 min. The LED diode structures grown by this technique compare well in quality with LEDs grown by the standard method in the commercially available AIX2000HT system.

Received: 12.09.2014