M. G. Mynbaeva, A. I. Pechnikov, A. A. Sitnikova, D. A. Kirilenko, A. A. Lavrent'ev, E. V. Ivanova, V. I. Nikolaev, “Large-area crystalline GaN slabs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 5,Pages <nobr>84

This article is cited in 6 papers

Large-area crystalline GaN slabs

M. G. Mynbaeva^abc, A. I. Pechnikov^abc, A. A. Sitnikova^abc, D. A. Kirilenko^abc, A. A. Lavrent'ev^abc, E. V. Ivanova^abc, V. I. Nikolaev^abc

^a Ioffe Institute, St. Petersburg
^b Perfect Crystals LLC, Saint-Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: Large-area (up to 100 cm$^2$) crystalline gallium nitride slabs have been produced by vapor-phase deposition on a ceramic support coated with hexagonal boron nitride. The material was characterized upon grinding and polishing of samples cut from the slabs. It was found that the slab material is an n-type semiconductor with optical, thermal, and mechanical properties close to those of single-crystal gallium nitride produced by other growth techniques.

Received: 27.10.2014