Abstract:
Results of an electrical study of the “long-range effect” in 6H-SiC crystals under irradiation with 167 MeV heavy Xe ions at fluences of 4 $\cdot$ 10$^9$ – 7 $\cdot$ 10$^{11}$ cm$^{-2}$ are reported for the first time. Structures with Schottky barriers formed on the C face of the crystals have been studied. The structures were irradiated in the same modes on the barrier and base (Si face) sides. Electrical procedures revealed for the first time the effect of a deep penetration of radiation defects to a depth several tens of times the range of Xe ions. It was found that radiation defects of the acceptor type are formed at the beginning of the range of Xe ions, whereas radiation defects of the donor type appear at the end of this range.
