A. V. Sachenko, Yu. V. Kryuchenko, A. V. Bobyl', V. P. Kostylyov, E. I. Terukov, D. A. Bogdanov, I. E. Panaiotti, I. O. Sokolovskyi, D. L. Orekhov, “Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 10,Pages <nobr>42

This article is cited in 5 papers

Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells

A. V. Sachenko^a, Yu. V. Kryuchenko^a, A. V. Bobyl'^b, V. P. Kostylyov^a, E. I. Terukov^bc, D. A. Bogdanov^b, I. E. Panaiotti^b, I. O. Sokolovskyi^a, D. L. Orekhov^c

^a Institute of Semiconductor Physics NAS, Kiev
^b Ioffe Institute, St. Petersburg
^c R&D Center TFTE, St.-Petersburg

Abstract: The possibility of creating tandem heterojunction-with-intrinsic-thin-layer (HIT) solar cells possessing photovoltaic conversion efficiency greater than that of the best existing single-junction HIT structures is analyzed. It is established that, because of small carrier lifetimes and high degrees of compensation, the use of amorphous silicon in tandem HIT cells cannot provide for record high conversion efficiency. Key parameters of the material for a widegap p-n junction on the frontal side of tandem solar cells are determined that will allow a photovoltaic conversion efficiency above 25% under AM1.5 conditions to be reached.

Received: 28.12.2014