Abstract:
Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten GaAs/AlAs quantum wells or by a sheet of InAs/In$_{0.15}$Ga$_{0.85}$As quantum dots. It is shown that passivation leads to a substantial rise in the photoluminescence intensity for mesa structures of all types.