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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015 Volume 41, Issue 13, Pages 86–94 (Mi pjtf7769)

This article is cited in 3 papers

The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

N. V. Kryzhanovskayaab, M. V. Lebedevc, T. V. L'vovac, Yu. V. Kudashovaa, I. I. Shostaka, È. I. Moiseevab, A. E. Zhukovabd, M. V. Maksimovabc, M. M. Kulaginac, A. M. Nadtochiya, S. I. Troshkovc, A. A. Blokhinb, M. A. Bobrovc

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b St. Petersburg State Polytechnic University, St. Petersburg, 195251, Russia
c Ioffe Institute, St. Petersburg
d Saint-Petersburg Scientific Center, Russian Academy of Sciences

Abstract: Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten GaAs/AlAs quantum wells or by a sheet of InAs/In$_{0.15}$Ga$_{0.85}$As quantum dots. It is shown that passivation leads to a substantial rise in the photoluminescence intensity for mesa structures of all types.

Received: 10.02.2015


 English version:
Technical Physics Letters, 2015, 41:7, 654–657

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