N. V. Kryzhanovskaya, M. V. Lebedev, T. V. L'vova, Yu. V. Kudashova, I. I. Shostak, È. I. Moiseev, A. E. Zhukov, M. V. Maksimov, M. M. Kulagina, A. M. Nadtochiy, S. I. Troshkov, A. A. Blokhin, M. A. Bobrov, “The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 13,Pages <nobr>86

This article is cited in 3 papers

The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

N. V. Kryzhanovskaya^ab, M. V. Lebedev^c, T. V. L'vova^c, Yu. V. Kudashova^a, I. I. Shostak^a, È. I. Moiseev^ab, A. E. Zhukov^abd, M. V. Maksimov^abc, M. M. Kulagina^c, A. M. Nadtochiy^a, S. I. Troshkov^c, A. A. Blokhin^b, M. A. Bobrov^c

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b St. Petersburg State Polytechnic University, St. Petersburg, 195251, Russia
^c Ioffe Institute, St. Petersburg
^d Saint-Petersburg Scientific Center, Russian Academy of Sciences

Abstract: Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten GaAs/AlAs quantum wells or by a sheet of InAs/In$_{0.15}$Ga$_{0.85}$As quantum dots. It is shown that passivation leads to a substantial rise in the photoluminescence intensity for mesa structures of all types.

Received: 10.02.2015