V. I. Ivashchenko, A. D. Pogrebnyak, O. V. Sobol', V. N. Rogoz, A. A. Meilekhov, S. N. Dub, A. I. Kupchishin, “The effect of Al target current on the structure and properties of (Nb<nobr>$_2$</nobr>Al)N”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 14,Pages <nobr>72

This article is cited in 6 papers

The effect of Al target current on the structure and properties of (Nb$_2$Al)N

V. I. Ivashchenko^a, A. D. Pogrebnyak^b, O. V. Sobol'^c, V. N. Rogoz^b, A. A. Meilekhov^c, S. N. Dub^d, A. I. Kupchishin^e

^a Institute for Problems in Materials Science, National Academy of Sciences of Ukraine, 03680, Kyiv-142, Ukraine
^b Sumy National University, 40007, Sumy, Ukraine
^c Khar'kov Polytechnical University
^d V. Bakul Institute for Superhard Materials of the National Academy of Sciences of Ukraine, Kiev
^e Kazakh National Pedagogical University

Abstract: Nanocomposite films based on (Nb$_2$Al)N intermetallic nitride have been obtained by the method of magnetron sputtering. X-ray diffraction analysis revealed two stable states of the crystalline structure: (i) NbN with low amount (within 5 at%) of dissolved Al in a composition close to (Nb$_2$Al)N and (ii) an amorphous component related to aluminum nitride formed by reactive magnetron sputtering. The substructural characteristics (grain size and microdeformation level) are sensitive to the current via Al target and exhibit correlation with nanohardness and Knoop hardness of the film, which vary within 29–33.5 and 46–48 GPa, respectively.

Received: 20.01.2015