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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015 Volume 41, Issue 16, Pages 8–14 (Mi pjtf7802)

This article is cited in 2 papers

Studying transitions between different regimes of current oscillations generated in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures

A. O. Selskiiab, A. A. Koronovskiiab, O. I. Moskalenkoab, A. E. Khramovab, T. M. Fromholdc, M. T. Greenawayc, A. G. Balanovabd

a Yuri Gagarin State Technical University of Saratov
b Saratov State University
c School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UÊ
d Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK

Abstract: The mechanisms of transitions between different regimes of current oscillations in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures have been studied. At relatively low temperatures, an increase in the applied voltage leads to a period-doubling bifurcation that causes a change in the dynamic regime. At increased temperatures, the transition takes place with the quenching of current oscillations.

Received: 08.08.2014


 English version:
Technical Physics Letters, 2015, 41:8, 768–770

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