Mapping of laser diode radiation intensity by atomic-force microscopy

The distribution of the intensity of laser diode radiation has been studied using an original method based on atomic-force microscopy (AFM). It is shown that the laser radiation intensity in both the near field and transition zone of a high-power semiconductor laser under room-temperature conditions can be mapped by AFM at a subwavelength resolution. The obtained patterns of radiation intensity distribution agree with the data of modeling and the results of near-field optical microscopy measurements.