A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, E. V. Okulich, I. N. Antonov, A. P. Kasatkin, E. G. Gryaznov, A. P. Yatmanov, O. N. Gorshkov, D. I. Tetelbaum, “The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 19,Pages 81

This article is cited in 4 papers

The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$

A. I. Belov^a, A. N. Mikhaylov^a, D. S. Korolev^a, V. A. Sergeev^a, E. V. Okulich^a, I. N. Antonov^a, A. P. Kasatkin^a, E. G. Gryaznov^ab, A. P. Yatmanov^b, O. N. Gorshkov^a, D. I. Tetelbaum^a

^a Lobachevsky State University of Nizhny Novgorod
^b Sedakov Research Institute for Measurement Systems, Nizhny Novgorod, 603950, Russia

Abstract: The effect of irradiation with H$^+$ and Ne$^+$ ions with an energy of 150 keV on memristive Au/SiO$_x$/TiN/Ti structures, which were obtained by magnetron sputtering and exhibited a reproducible resistive switching effect, is studied. It is demonstrated that the low and high resistance states remain unchanged up to a dose of 1 $\cdot$ 10$^{16}$ cm$^{-2}$ in the case of irradiation with H$^+$ ions and a dose of $\sim$ 3 $\cdot$ 10$^{15}$ cm$^{-2}$ under irradiation with Ne$^+$ ions. The obtained results demonstrate the high tolerance of parameters of the studied memristive structures to both ionizing radiation and displacement damage.

Received: 05.05.2015