V. V. Lundin, E. E. Zavarin, M. G. Popov, S. I. Troshkov, A. V. Sakharov, I. P. Smirnova, M. M. Kulagina, V. Yu. Davydov, A. N. Smirnov, A. F. Tsatsul'nikov, “The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 20,Pages <nobr>74

The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

V. V. Lundin^ab, E. E. Zavarin^ab, M. G. Popov^ab, S. I. Troshkov^b, A. V. Sakharov^ab, I. P. Smirnova^ab, M. M. Kulagina^b, V. Yu. Davydov^b, A. N. Smirnov^b, A. F. Tsatsul'nikov^ab

^a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia
^b Ioffe Institute, St. Petersburg

Abstract: Heavily Si-doped Al$_x$Ga$_{1-x}$N mesastrip structures were grown by selective MOVPE technology. Al$_x$Ga$_{1-x}$N:Si mesastructures with $x\sim$ 0.01–0.07 possess a smoother top and more even side surfaces as compared to those in analogous GaN:Si structures. During the growth of mesastructures with $x\sim$ 0.03–0.07, a thin nanocrystalline AlN deposit appears on the Si3N4 mask. This deposit is not formed during the growth of structures with sufficiently low aluminum content.

Received: 19.04.2015