A. A. Lebedev, B. Ya. Ber, E. V. Bogdanova, N. V. Seredova, D. Yu. Kazantsev, V. V. Kozlovsky, “On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 23,Pages 61

On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC

A. A. Lebedev^a, B. Ya. Ber^a, E. V. Bogdanova^a, N. V. Seredova^a, D. Yu. Kazantsev^a, V. V. Kozlovsky^b

^a Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Photoluminescence (PL) appearing in $p$-4H-SiC upon its electron irradiation has been studied. A model that accounts for the dependence of the PL intensity on the irradiation dose is suggested. The conclusion is drawn that nitrogen–radiation defect donor–acceptor pairs are PL activators.

Received: 19.05.2015