S. O. Slipchenko, A. A. Podoskin, I. V. Shushkanov, A. Rizaev, M. Kondratov, N. A. Rudova, V. A. Strelets, N. V. Shuvalova, A. E. Grishin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, N. A. Pikhtin, “Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 11,Pages <nobr>7

Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks

S. O. Slipchenko^a, A. A. Podoskin^a, I. V. Shushkanov^a, A. Rizaev^a, M. Kondratov^a, N. A. Rudova^a, V. A. Strelets^a, N. V. Shuvalova^a, A. E. Grishin^a, T. A. Bagaev^b, M. A. Ladugin^b, A. A. Marmalyuk^b, V. A. Simakov^b, N. A. Pikhtin^a

^a Ioffe Institute, St. Petersburg
^b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: High-power ns-duration laser pulse sources based on vertical stacks of “semiconductor laser-thyristor switches” emitting at a wavelength of 940 nm have been developed and studied. Using a 400-$\mu$m-wide monolithic emitting aperture design, the ability to increase peak power and reduce pulsewidth to 45.6 W and 2.25 ns has been demonstrated. The lasing turn-on inhomogeneity along the aperture has been reduced to 50–80 ps for the developed sources.

Keywords: current switch, semiconductor laser, thyristor, vertical stack.

Received: 24.12.2024
Revised: 21.02.2025
Accepted: 24.02.2025

DOI: 10.61011/PJTF.2025.11.60479.20235