Lasing in InGaN/GaN/AlGaN disk microstructures on silicon

Microdisk lasers have been developed using an InGaN/GaN semiconductor structure on a Si substrate. Lasing has been demonstrated in microlasers with a diameter of 5–8 $\mu$m, operating under optical pumping in a pulsed mode via whispering gallery modes at room temperature. We demonstrate a shift of the lasing wavelength from 406 nm to 425 nm with increasing laser diameter due to a decrease in optical loss values within the gain band of the active region based on InGaN/GaN quantum wells.